ROHM Semiconductor 2SAR542F3TR BJTs - Bipolar Transistors 4.5-5.5V 1ch Nch FET LDO Controllers

Technology: Si

Unit Weight: 41.711 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 2.1 W

DC Current Gain hFE Max: 500 at - 500 mA, - 2 V

Gain Bandwidth Product fT: 240 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: - 3 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 200 at - 500 mA, - 2 V

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 200 mV