ROHM Semiconductor 2SAR523EBTL BJTs - Bipolar Transistors PNP General Purpose Amplification Transistor

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 150 mW

DC Current Gain hFE Max: 560 at - 1 mA, - 6 V

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120 at - 1 mA, - 6 V

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 400 mV