ROHM Semiconductor 2SAR340PT100P BJTs - Bipolar Transistors PNP -400V Vceo -100mA Ic MPT3

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 270 at - 10 mA, - 10 V

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 400 V

Continuous Collector Current: - 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 82 at - 10 mA, - 10 V

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 150 mV