ROHM Semiconductor 2SA2030T2L BJTs - Bipolar Transistors PNP 12V 0.5A

Width: 0.8 mm

Height: 0.5 mm

Length: 1.2 mm

Technology: Si

Unit Weight: 430 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 150 mW

DC Current Gain hFE Max: 680 at - 10 mA, -2 V

Gain Bandwidth Product fT: 260 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 15 V

Continuous Collector Current: - 500 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 270 at - 10 mA, -2 V

Collector- Emitter Voltage VCEO Max: 12 V

Collector-Emitter Saturation Voltage: 250 mV