ROHM Semiconductor 2SA2029FHAT2LQ BJTs - Bipolar Transistors PNP General Purpose Amplification Transistor (Corresponds to AEC-Q101)

Technology: Si

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 150 mW

DC Current Gain hFE Max: 390

Gain Bandwidth Product fT: 140 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: - 150 mA

Maximum DC Collector Current: 150 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 500 mV