ROHM Semiconductor 2SA1036KT146Q BJTs - Bipolar Transistors PNP 32V 0.5A

Width: 1.6 mm

Height: 1.1 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 390

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: - 500 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 82

Collector- Emitter Voltage VCEO Max: 32 V

Collector-Emitter Saturation Voltage: 600 mV