Renesas Electronics RJL5014DPP-A0#T2 MOSFETs POWER TRS1 HV-MOS TO220FP MOS AP5H POWER

Width: 10 mm

Height: 4.5 mm

Length: 15 mm

Fall Time: 20 ns

Rise Time: 27 ns

Technology: Si

Channel Mode: Enhancement

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 43 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 35 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 32 ns

Typical Turn-Off Delay Time: 95 ns

Id - Continuous Drain Current: 19 A

Maximum Operating Temperature: + 150 C

Rds On - Drain-Source Resistance: 400 mOhms

Vds - Drain-Source Breakdown Voltage: 500 V

Vgs th - Gate-Source Threshold Voltage: 4 V