Renesas Electronics RJK2511DPK-00#T0 MOSFET
ModelRJK2511DPK-00#T0
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Vgs (Max): 30V
Gate Charge (Qg): 120nC
Power consumption: 200W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 250V
Continuous drain current: 65A
Input Capacitance (Ciss): 4900pF
Operating temperature range: 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 34mOhm
Drive Voltage (Max Rds On, Min Rds On): 10V
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