Renesas Electronics RJH60D1DPP-A0#T2 IGBTs POWER TRANSISTOR IGBT 600V 10A
ModelRJH60D1DPP-A0#T2
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 30 W
Maximum Gate Emitter Voltage: - 30 V, 30 V
Maximum Operating Temperature: + 150 C
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.9 V
Continuous Collector Current at 25 C: 20 A
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