Renesas Electronics RJF0613JSP-00#J0 MOSFETs POWER MOSFET THERMAL FET N-CH 60V
ModelRJF0613JSP-00#J0
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Width: 3.95 mm
Height: mm
Length: 4.9 mm
Fall Time: 12 us
Rise Time: 11 us
Technology: Si
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 2.5 W
Vgs - Gate-Source Voltage: - 2.5 V, + 16 V
Typical Turn-On Delay Time: 3.5 us
Typical Turn-Off Delay Time: 7 us
Id - Continuous Drain Current: 10 A
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 30 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts