Renesas Electronics RBN75H125S1FP4-A0#CB0 IGBT Transistors POWER TRANSISTOR 1250V IGBT 75A G8H
ModelRBN75H125S1FP4-A0#CB0
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 517 W
Maximum Gate Emitter Voltage: - 30 V, 30 V
Maximum Operating Temperature: + 175 C
Collector- Emitter Voltage VCEO Max: 1.25 kV
Continuous Collector Current Ic Max: 300 A
Collector-Emitter Saturation Voltage: 1.8 V
Continuous Collector Current at 25 C: 150 A
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