Renesas Electronics RBK04U04GNS-0000#HBH MOSFETs NCH PWR MOSFET 40V 35A 1.5MOHM SON-8 5X6
ModelRBK04U04GNS-0000#HBH
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Technology: Si
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Qg - Gate Charge: 111 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 83 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 35 A
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 1.5 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
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