Renesas Electronics HIP2100IBZT7A SOICN

EPC: M8.15

Size: 4.9X3.9X0.00mm

Type: SOICN

Pitch: 1.3mm

Width: 3.9mm

Length: 4.9mm

Fall Time: 10ns

Gate type: NChannelMOSFET

Rise Time: .010

Thickness: 0

Category 1: Half-Bridge FET Drivers

Category 2: Half-Bridge FET Drivers

Input type: Non-inverted

Channel Fit: Independence

Charge Pump: No

VBIAS (Max): 14

Constitution: Half Bridge

Voltage (UL): 4|7V

Mounting Type: Surface Mount

Rise/Fall Time: 10|10ns

Supply voltage: 9 to 14V

Bootstrap Voltage: 114V

Input Logic Level: CMOS

Number of drivers: 2

Turn-On Prop Delay: 20

Qualification Level: Standard

Turn-Off Prop Delay: 20

Peak Pull-up Current: 2

Operating temperature: --55 to 150C

Maximum output current: 2|2A

Peak Pull-down Current: 2

Operating temperature range: -40 to 85C