Renesas Electronics 2SK1317-E MOSFETs NCH PWR MOSFET 1500V 2.5A 12000MOHM TO3P

Width: mm

Height: mm

Length: mm

Technology: Si

Unit Weight: 1.600 g

Channel Mode: Enhancement

Mounting Style: Through Hole

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 100 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 2.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 12 Ohms

Vds - Drain-Source Breakdown Voltage: 1.5 kV

Vgs th - Gate-Source Threshold Voltage: 4 V