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Rectron BC856B BJTs - Bipolar Transistors SOT23,PNP,0.1A,80V,220-475HFE

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Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 475

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 220

Collector- Emitter Voltage VCEO Max: 65 V

Collector-Emitter Saturation Voltage: 500 mV

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