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Rectron BC807-T BJTs - Bipolar Transistors PNP 0.8A 45V Gen Pur

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Technology: Si

Unit Weight: 8 mg

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 250 mW

DC Current Gain hFE Max: 600

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 45 V

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 700 mV

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