Qorvo TGF2978-SM GaN SiC HEMT 8-12GHz 20W GaN PAE 50% Gain 11dB

Gain: 11 dB

Technology: GaN

Unit Weight: 123 mg

Output Power: 19 W

Configuration: Single

Mounting Style: SMD/SMT

Development Kit: TGF2978-SMEVB1

Transistor Type: HEMT

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 33 W

Maximum Operating Frequency: 12 GHz

Minimum Operating Frequency: 0 Hz

Id - Continuous Drain Current: 1.3 A

Maximum Operating Temperature: + 225 C

Vgs - Gate-Source Breakdown Voltage: - 2.7 V

Vds - Drain-Source Breakdown Voltage: 32 V