Qorvo TGF2965-SMTR13 GaN FETs .03-3GHz,5W,32V,50Ohm GaN RF I/P-Mtch T

Technology: GaN-on-SiC

Mounting Style: SMD/SMT

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 7.5 W

Vgs - Gate-Source Voltage: - 7 V, + 2 V

Id - Continuous Drain Current: 600 mA

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 32 V