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Qorvo T2G6000528-Q3 GaN FETs DC-6GHz 28V P3dB 10W @3.3GHz

ModelT2G6000528-Q3
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Gain: 15 dB

Technology: GaN

Unit Weight: 7.396 g

Output Power: 10 W

Configuration: Single

Mounting Style: SMD/SMT

Development Kit: T2G6000528-Q3-EVB1, T2G6000528-Q3-EVB3, T2G6000528-Q3-EVB5

Transistor Type: HEMT

Moisture Sensitive: Yes

Transistor Polarity: N-Channel

Pd - Power Dissipation: 12.5 W

Maximum Operating Frequency: 6 GHz

Minimum Operating Frequency: 0 Hz

Id - Continuous Drain Current: 650 mA

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