Qorvo T1G4012036-FS GaN SiC HEMT DC-3.5GHz 36Volt GaN 120 Watt Peak
ManufacturerQorvo(View more products from this manufacturer)
ModelT1G4012036-FS
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Gain: 18.4 dB
Technology: GaN
Mounting Style: SMD/SMT
Transistor Type: HEMT
Moisture Sensitive: Yes
Transistor Polarity: N-Channel
Pd - Power Dissipation: 117 W
Maximum Drain Gate Voltage: - 2.9 V
Maximum Operating Frequency: 3.3 GHz
Id - Continuous Drain Current: 12 A
Vds - Drain-Source Breakdown Voltage: 36 V
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts