Qorvo QPD1028 GaN FETs 750W, 65V, Pre-matched, 1.2-1.4GHz, Earl

Gain: 19.8 dB

Technology: GaN SiC

Output Power: 750 W

Mounting Style: SMD/SMT

Transistor Type: HEMT

Moisture Sensitive: Yes

Pd - Power Dissipation: 400 W

Id - Continuous Drain Current: 19 A

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 65 V