Qorvo QPD1017 GaN FETs 3.1-3.5 GHz,450W,50V GaN RF IMFET

Gain: 15.7 dB

Technology: GaN

Output Power: 460 W

Configuration: Single

Mounting Style: SMD/SMT

Development Kit: QPD1017PCB4B01

Transistor Type: HEMT

Moisture Sensitive: Yes

Transistor Polarity: N-Channel

Pd - Power Dissipation: 511 W

Maximum Drain Gate Voltage: 55 V

Maximum Operating Frequency: 3.5 GHz

Minimum Operating Frequency: 3.1 GHz

Id - Continuous Drain Current: 20 A

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C