Qorvo QPD1010 GaN FETs DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN

Gain: 24.7 dB

Technology: GaN

Unit Weight: 2.300 g

Output Power: 11 W

Configuration: Single

Mounting Style: SMD/SMT

Development Kit: QPD1010-EVB1

Transistor Type: HEMT

Moisture Sensitive: Yes

Transistor Polarity: N-Channel

Pd - Power Dissipation: 13.5 W

Maximum Operating Frequency: 4 GHz

Minimum Operating Frequency: 0 Hz

Id - Continuous Drain Current: 400 mA

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: 145 V

Vds - Drain-Source Breakdown Voltage: 50 V

Vgs th - Gate-Source Threshold Voltage: - 2.8 V