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PANJIT PSMN028N10NS2_R2_00201 MOSFETs 100V 2.8mohms TOLL for Industrail market

ModelPSMN028N10NS2_R2_00201
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Technology: Si

Unit Weight: 1 g

Channel Mode: Enhancement

Configuration: Single

Qg - Gate Charge: 65 nC

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 240 A

Rds On - Drain-Source Resistance: 2.8 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 3.8 V

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