PANJIT PJX8603_R2_00001 MOSFETs Complementary Enhancement Mode MOSFET-ESD Protected

Fall Time: 20 ns

Rise Time: 20 ns

Technology: Si

Unit Weight: 6 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 950 pC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 300 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 2.3 ns

Typical Turn-Off Delay Time: 7 ns

Id - Continuous Drain Current: 360 mA, 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 2.5 Ohms

Vds - Drain-Source Breakdown Voltage: 50 V

Vgs th - Gate-Source Threshold Voltage: 1 V