PANJIT PJT7808_R1_00001 MOSFETs 20V N-Channel Enhancement Mode MOSFET

Fall Time: 23 ns

Rise Time: 20 ns

Technology: Si

Unit Weight: 7.500 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 1.4 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 350 mW

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 2.8 ns

Typical Turn-Off Delay Time: 23 ns

Id - Continuous Drain Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 400 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 900 mV