PANJIT PJS6839_S1_00001 MOSFETs 60V Dual P-Channel Enhancement Mode MOSFET

Fall Time: 32 ns

Rise Time: 19 ns

Technology: Si

Unit Weight: 14.194 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Transistor Type: 2 P-Channel

Qg - Gate Charge: 1.1 nC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 500 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 4.8 ns

Typical Turn-Off Delay Time: 52 ns

Id - Continuous Drain Current: 300 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 4 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V