onsemi SPZT651T1G BJTs - Bipolar Transistors SS 60V XSTR NPN SPL
Manufactureronsemi(View more products from this manufacturer)
ModelSPZT651T1G
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Technology: Si
Unit Weight: 110 mg
REACH - SVHC: Details
Configuration: Single
Qualification: AEC-Q100
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 800 mW
Gain Bandwidth Product fT: 75 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 80 V
Maximum DC Collector Current: 2 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 75 at 50 mA, 2 VDC
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 500 mV
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