onsemi SMMBTH10-4LT3G BJTs - Bipolar Transistors NPN Bipolar Transistor
Manufactureronsemi(View more products from this manufacturer)
ModelSMMBTH10-4LT3G
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Technology: Si
Unit Weight: 39 mg
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 300 mW
DC Current Gain hFE Max: 240
Gain Bandwidth Product fT: 800 MHz
Emitter- Base Voltage VEBO: 3 V
Collector- Base Voltage VCBO: 30 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 60
Collector- Emitter Voltage VCEO Max: 25 V
Collector-Emitter Saturation Voltage: 500 mV
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