onsemi SBCW66GLT1G BJTs - Bipolar Transistors SS GP XSTR NPN 45V

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 225 mW

DC Current Gain hFE Max: 400 at 100 mA, 1 VDC

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 75 V

Maximum DC Collector Current: 800 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 160 at 100 mA, 1 VDC

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 700 mV