onsemi SBC817-40LT1G BJTs - Bipolar Transistors SS GP XSTR SPCL TR

Width: 1.3 mm

Height: 0.94 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 39 mg

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 225 mW

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 500 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 250 at 100 mA, 1 V, 40 at 500 mA, 1 V

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 700 mV