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onsemi NTS4101PT1 Power MOSFET

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Type: Power MOSFET

Vgs(th): 1.5 V

Vgs (Max): 8V

Gate Charge (Qg): 9nC

Power consumption: 329mW

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 20V

Continuous drain current: 1.37A

Input Capacitance (Ciss): 840pF

Operating temperature range: -55 to 150C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 120mOhm

Drive Voltage (Max Rds On, Min Rds On): 2.5|4.5V

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