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onsemi NTMSD2P102R2 MOSFET

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Gate Charge (Qg): 18nC

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 20V

Continuous drain current: 2.3A

Input Capacitance (Ciss): 750pF

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 90mOhm

Datasheet


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