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onsemi NTB5605PT4G Power MOSFET

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Type: Power MOSFET

Vgs(th): 2 V

Vgs (Max): 20V

Gate Charge (Qg): 22nC

Power consumption: 88W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 60V

Continuous drain current: 18.5A

Input Capacitance (Ciss): 1190pF

Operating temperature range: -55 to 175C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 140mOhm

Drive Voltage (Max Rds On, Min Rds On): 5V

Datasheet


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