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onsemi NSVMMBT5551M3T5G BJTs - Bipolar Transistors SOT-723 GP NPN TRANS

ModelNSVMMBT5551M3T5G
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Technology: Si

Unit Weight: 1.275 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 265 mW

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 180 V

Maximum DC Collector Current: 60 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 160 V

Collector-Emitter Saturation Voltage: 200 mV

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