onsemi NSV30100LT1G BJTs - Bipolar Transistors Low VCE(sat) Transistor, PNP, 30 V, 1.0 A

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 710 mW

DC Current Gain hFE Max: 300

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 100

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 250 mV