onsemi NJVMJD31CT4G BJTs - Bipolar Transistors 3.0 A, 100 V NPN Bipolar Power Transistor
Manufactureronsemi(View more products from this manufacturer)
ModelNJVMJD31CT4G
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Technology: Si
Unit Weight: 260.400 mg
REACH - SVHC: Details
Qualification: AEC-Q100
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 15 W
Emitter- Base Voltage VEBO: 5 V
Continuous Collector Current: 3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
Collector- Emitter Voltage VCEO Max: 100 V
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts