onsemi NCP5111DR2G Half-Bridge HIGH VOLT MOSFET DR MOSFET IGBT DRIVER
Manufactureronsemi(View more products from this manufacturer)
ModelNCP5111DR2G
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Fall Time: 35 ns
Rise Time: 85 ns
Technology: Si
Unit Weight: 71.850 mg
Mounting Style: SMD/SMT
Output Current: 500 mA
Number of Drivers: 2 Driver
Number of Outputs: 2 Output
Supply Voltage - Max: 20 V
Supply Voltage - Min: - 300 mV
Operating Supply Current: 5 mA
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 40 C
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