onsemi MMBTA56WT1G BJTs - Bipolar Transistors 500mA 80V PNP

Width: 1.24 mm

Height: 0.85 mm

Length: 2.1 mm

Technology: Si

Unit Weight: 6.200 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 460 mW

Gain Bandwidth Product fT: 50 MHz

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: - 500 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 250 mV