onsemi MJH6284G Darlington Transistors 20A 100V Bipolar Power NPN

Width: 4.9 mm

Height: 12.2 mm

Length: 15.2 mm

Unit Weight: 6.500 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 160 W

DC Current Gain hFE Max: 18000

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 20 A

Maximum DC Collector Current: 20 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 100, 750

Maximum Collector Cut-off Current: 1 mA

Collector- Emitter Voltage VCEO Max: 100 V