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onsemi MCH6001-TL-E RF Bipolar Transistors BIP N+N 150MA 8V FT=16G

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Technology: Si

Unit Weight: 7.500 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 16 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 600 mW

Emitter- Base Voltage VEBO: 2 V

Continuous Collector Current: 150 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 60 at 50 mA, 5 V

Collector- Emitter Voltage VCEO Max: 8 V

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