onsemi FFSB2065BDN-F085 Schottky Silicon Carbide Diodes Auto SiC Schottky Diode, 650 V
Manufactureronsemi(View more products from this manufacturer)
ModelFFSB2065BDN-F085
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Technology: SiC
Unit Weight: 1.485 g
REACH - SVHC: Details
Configuration: Dual Anode Common Cathode
Qualification: AEC-Q101
Mounting Style: SMD/SMT
If - Forward Current: 20 A
Ir - Reverse Current: 40 uA
Vf - Forward Voltage: 1.38 V
Vr - Reverse Voltage: 650 V
Pd - Power Dissipation: 75 W
Ifsm - Forward Surge Current: 45 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Vrrm - Repetitive Reverse Voltage: 650 V
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