onsemi CPH5518-TL-E BJTs - Bipolar Transistors BIP PNP+NPN 1A 50V

Technology: Si

Unit Weight: 14.230 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 1.2 W

Gain Bandwidth Product fT: 420 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V, 50 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 200

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 90 mV, 125 mV