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onsemi CPH3101-TL-E BJTs - Bipolar Transistors BIP PNP 2A 30V

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Technology: Si

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 900 mW

Gain Bandwidth Product fT: 150 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 2 A

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 200

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 350 mV

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