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onsemi 50A02MH-TL-E BJTs - Bipolar Transistors BIP PNP 0.5A 50V

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Technology: Si

Unit Weight: 28 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 600 mW

DC Current Gain hFE Max: 500

Gain Bandwidth Product fT: 690 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: - 500 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 60 mV

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