onsemi 2SD1815S-TL-E BJTs - Bipolar Transistors BIP NPN 3A 100V
Manufactureronsemi(View more products from this manufacturer)
Model2SD1815S-TL-E
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Technology: Si
Unit Weight: 281.480 mg
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 1 W
DC Current Gain hFE Max: 400
Gain Bandwidth Product fT: 180 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 120 V
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 140
Collector- Emitter Voltage VCEO Max: 100 V
Collector-Emitter Saturation Voltage: 150 mV
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