onsemi 2SD1801T-E BJTs - Bipolar Transistors BIP NPN 2A 50V
Manufactureronsemi(View more products from this manufacturer)
Model2SD1801T-E
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Technology: Si
Unit Weight: 4 g
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 800 mW
Gain Bandwidth Product fT: 150 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 60 V
Continuous Collector Current: 2 A
Maximum DC Collector Current: 2 A
Maximum Operating Temperature: + 150 C
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 150 mV
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