onsemi 2SC6095-TD-E BJTs - Bipolar Transistors BIP NPN 2.5A 80V
Manufactureronsemi(View more products from this manufacturer)
Model2SC6095-TD-E
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Technology: Si
Unit Weight: 51.550 mg
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 3.5 W
DC Current Gain hFE Max: 600
Gain Bandwidth Product fT: 350 MHz
Emitter- Base Voltage VEBO: 6.5 V
Collector- Base Voltage VCBO: 120 V
Continuous Collector Current: 2.5 A
Maximum DC Collector Current: 2.5 A
Maximum Operating Temperature: + 150 C
Collector- Emitter Voltage VCEO Max: 80 V
Collector-Emitter Saturation Voltage: 100 mV
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