onsemi 2SC3649T-TD-E BJTs - Bipolar Transistors BIP NPN 1.5A 160V
Manufactureronsemi(View more products from this manufacturer)
Model2SC3649T-TD-E
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Technology: Si
Unit Weight: 130.500 mg
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 500 mW
Gain Bandwidth Product fT: 120 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 180 V
Continuous Collector Current: - 1.5 A, 1.5 A
Maximum DC Collector Current: 1.5 A
Maximum Operating Temperature: + 150 C
Collector- Emitter Voltage VCEO Max: 160 V
Collector-Emitter Saturation Voltage: 130 mV
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