onsemi 2SA2153-TD-E BJTs - Bipolar Transistors BIP PNP 2A 50V

Technology: Si

Unit Weight: 51.320 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 3.5 W

DC Current Gain hFE Max: 560 at - 100 mA, - 2 V

Gain Bandwidth Product fT: 420 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 200 at - 100 mA, - 2 V

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 200 mV